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| PD - 9.1242B IRF7307 HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 N -C H AN N EL M O SF ET 1 8 2 7 D1 D1 D2 D2 N-Ch VDSS 20V P-Ch -20V 3 4 6 5 P-C H AN N E L M OS FE T T op V iew RDS(on) 0.050 0.090 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG 10 Sec. Pulse Drain Current, VGS @ 4.5V Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel 5.7 5.2 4.1 21 2.0 0.016 12 5.0 -55 to + 150 -5.0 P-Channel -4.7 -4.3 -3.4 -17 Units A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 62.5 Units C/W 8/25/97 IRF7307 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch V GS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. 20 -- -- -20 -- -- -- 0.044 -- -- -0.012 -- -- -- 0.050 -- -- 0.070 -- -- 0.090 -- -- 0.140 0.70 -- -- -0.70 -- -- 8.30 -- -- 4.00 -- -- -- -- 1.0 -- -- -1.0 -- -- 25 -- -- -25 -- -- 100 -- -- 20 -- -- 22 -- -- 2.2 -- -- 3.3 -- -- 8.0 -- -- 9.0 -- 9.0 -- -- 8.4 -- -- 42 -- -- 26 -- -- 32 -- -- 51 -- -- 51 -- -- 33 -- -- 4.0 -- -- 6.0 -- -- 660 -- -- 610 -- -- 280 -- -- 310 -- -- 140 -- -- 170 -- Units V V/C Conditions VGS = 0V, I D = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 4.5V, ID = 2.6A VGS = 2.7V, ID = 2.2A VGS = -4.5V, I D = -2.2A VGS = -2.7V, I D = -1.8A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 2.6A VDS = -15V, ID = -2.2A VDS = 16V, V GS = 0V VDS = -16V, VGS = 0V, VDS = 16V, VGS = 0V, TJ = 125C VDS = -16V, VGS = 0V, TJ = 125C VGS = 12V N-Channel ID = 2.6A, VDS = 16V, V GS = 4.5V nC P-Channel ID = -2.2A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 2.6A, RG = 6.0, RD = 3.8 ns P-Channel VDD = -10V, ID = -2.2A, RG = 6.0, RD = 4.5 nH Between lead tip and center of die contact N-Channel VGS = 0V, V DS = 15V, = 1.0MHz pF P-Channel VGS = 0V, V DS = -15V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V S IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance A Source-Drain Ratings and Characteristics Parameter IS ISM V SD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions -- -- 2.5 -- -- -2.5 A -- -- 21 -- -- -17 -- -- 1.0 TJ = 25C, IS = 1.8A, VGS = 0V V -- -- -1.0 TJ = 25C, IS = -1.8A, VGS = 0V -- 29 44 N-Channel ns -- 56 84 T J = 25C, IF = 2.6A, di/dt = 100A/s -- 22 33 P-Channel nC -- 71 110 T J = 25C, IF = -2.2A, di/dt = 100A/s Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. N-Channel ISD 2.6A, di/dt 100A/s, VDD V(BR)DSS , TJ 150C P-Channel ISD -2.2A, di/dt 50A/s, VDD V(BR)DSS, TJ 150C N-Channel 1000 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V B OTTOM 1.5V TOP IRF7307 1000 I , Dr ain-to-Sou rce Cur rent ( A) D 100 I , Drain- to-S ourc e C urrent ( A) D VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V B OTTOM 1.5V TOP 100 10 10 1 .5V 20 s P U LS E W ID T H T J = 15 0 C A 0.1 1 10 100 1.5 V 1 0.1 1 20 s P U LS E W ID T H T J = 25 C A 10 100 1 V DS , D rain-to- So urc e V oltage (V ) V DS , D rain- to- So urc e V oltage (V ) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 2.0 TJ = 25 C TJ = 1 50 C R D S(on) , Dr ain- to-S ource O n Res istanc e (Norm alized) I D = 4 .3A I D , D ra in -to -S ou rc e C ur r en t ( A ) 1.5 10 1.0 0.5 1 1.5 2.0 2.5 3.0 V D S = 1 5V 20 s PU LS E W ID T H 3.5 4.0 4.5 5.0 A 0.0 -60 -40 -20 V G S = 4.5 V 0 20 40 60 80 A 100 120 140 160 V GS , G a te - to -S o ur c e V olta ge (V ) TJ , J unction Tem perature (C ) Fig 3. Typical Transfer Characteristics 1200 Fig 4. Normalized On-Resistance Vs. Temperature 10 V G S , G ate- to- Sour ce V oltage (V ) V GS C is s C rs s C os s = = = = 0V , f = 1M H z C g s + C g d , C d s SH O R T E D C gd C ds + C g d I D = 2 .6A V D S = 16 V 8 C , Capac itanc e (pF) 900 C is s 6 600 C os s 4 300 C rs s 2 0 1 10 100 A 0 0 5 10 F O R TE S T C IR C U IT S E E F I GU R E 11 15 20 25 A V D S , Drain -to -S ourc e Voltage (V ) Q G , Tota l G ate C har ge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage IRF7307 100 N-Channel 100 I SD , R e v er s e D ra in C u rre n t (A ) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D, Drain Current (A) 100us TJ = 150 C TJ = 25C 10 1ms 1 0.1 0.0 0.5 1.0 1.5 V G S = 0V 2.0 A 2.5 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 V SD , Sour ce-to-Dr ain Voltage ( V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 6.0 Fig 8. Maximum Safe Operating Area VDS VGS RG RD 5.0 D.U.T. + ID , Drain Current (A) 4.0 V - DD 3.0 4.5V Pulse Width 1 s Duty Factor 0.1 % 2.0 1.0 Fig 10a. Switching Time Test Circuit 25 50 75 100 125 150 0.0 TC , Case Temperature ( C) VDS 90% Fig 9. Maximum Drain Current Vs. Ambient Temperature Current Regulator Same Type as D.U.T. 10% VGS td(on) tr t d(off) tf 50K 12V .2F .3F Fig 10b. Switching Time Waveforms D.U.T. + V - DS 4.5V QGS QG QGD VGS 3mA VG IG ID Charge Current Sampling Resistors Fig 11a. Gate Charge Test Circuit Fig 11b. Basic Gate Charge Waveform P-Channel 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V B OTTOM - 1.5 V TOP IRF7307 100 TOP -I D , Drain- to-S ourc e Current (A ) 10 - ID , Dr ain- to-S ource Current (A) VGS - 7.5V - 5. 0V - 4. 0V - 3. 5V - 3. 0V - 2. 5V - 2. 0V BOTTOM - 1. 5V 10 1 1 -1.5V -1.5 V 20 s P U LS E W ID T H TJ = 25 C 0.1 1 10 0.1 0.01 A 100 0.1 0.01 20 s PU L SE W ID T H T J = 150 C 0.1 1 10 100 A -V DS , Dra in-to-S ourc e Vo ltage ( V) -VDS , D rain-to-S ourc e Voltage (V) Fig 12. Typical Output Characteristics 100 Fig 13. Typical Output Characteristics 2.0 R DS(on) , Drain- to- Sour ce O n R esis tanc e (Nor malized) I D = -3. 6A - I D , D r ai n- to- S ou rc e C u r re n t ( A ) TJ = 2 5 C 10 1.5 TJ = 1 5 0 C 1.0 1 0.5 0.1 1.5 2.0 2.5 3.0 V D S = - 15 V 2 0 s P U L S E W ID T H 3.5 4.0 4.5 5.0 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = -4 .5V 100 120 140 160 A -VG S , G a te -to -S ou rc e V olta ge (V ) T J , J unc tion Tem per ature (C ) Fig 14. Typical Transfer Characteristics 1500 Fig 15. Normalized On-Resistance Vs. Temperature 10 -V GS , G a t e-t o -S ou rc e V o lt a ge (V ) V GS C is s C rs s C os s = = = = 0V, f = 1 MHz C g s + C g d , Cd s S H O R T E D C gd C d s + C gd I D = -2.2A V D S = -16 V 8 C, C apacitance (pF) C is s 1000 Co s s C rs s 500 6 4 2 0 1 10 100 A 0 0 5 10 FO R TE ST C IR C U IT SE E F IG U R E 2 2 15 20 25 A -V D S , Drain- to -So urc e V oltage ( V) Q G , Total G ate Charge ( nC) Fig 16. Typical Capacitance Vs. Drain-to-Source Voltage Fig 17. Typical Gate Charge Vs. Gate-to-Source Voltage IRF7307 100 P-Channel 100 -I SD , R e v e rs e D ra in C u rre n t (A ) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 T J = 150C TJ = 25 C -I D, Drain Current (A) I 10 1ms 1 0.1 0.3 0.6 0.9 1.2 VG S = 0 V A 1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 1.5 - VSD , Sour ce-to-Drain V oltage (V) -V DS, Drain-to-Source Voltage (V) Fig 18. Typical Source-Drain Diode Forward Voltage 5.0 Fig 19. Maximum Safe Operating Area RD VDS VGS D.U.T. + 4.0 -I D, Drain Current (A) 3.0 -4.5V 2.0 Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 21a. Switching Time Test Circuit 25 50 75 100 125 150 0.0 T C, Case Temperature ( C) VDS 90% Fig 20. Maximum Drain Current Vs. Ambient Temperature Current Regulator Same Type as D.U.T. 10% VGS td(on) tr t d(off) tf 50K 12V .2F .3F Fig 21b. Switching Time Waveforms VDS VGS -3mA IG ID Charge Current Sampling Resistors Fig 22a. Gate Charge Test Circuit + D.U.T. -4.5V QGS VG QG QGD Fig 22b. Basic Gate Charge Waveform - RG VDD N & P-Channel IRF7307 100 (Z thJA ) D = 0.50 0.20 10 0.10 Thermal Response 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7307 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - VDD * * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [ VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 24. For N and P Channel HEXFETS IRF7307 Package Outline SO-8 Outline Dimensions are shown in millimeters (inches) D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 0.72 (.028 ) 8X 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 0.10 (.004) 6 C 8X -CB 8X 0.25 (.010) A1 M CASBS L 8X RECOMMENDED FOOTPRINT NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking Information SO-8 E X A M P LE : TH IS IS A N IR F 7 101 D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X W AFER LO T C O D E (LA S T 4 D IG IT S ) 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O F 7 101 T OP PART NUMBER B O T TO M IRF7307 Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) 1.85 (.072) 4.10 (.161) 1.65 (.065) 3.90 (.154) 1.60 ( .062) 1.50 ( .059) 0.35 ( .013) 0.25 ( .010) T ERM INAT IO N N UM BE R 1 2.0 5 (.08 0) 1.9 5 (.07 7) 1 5.55 (.218) 5.45 (.215) 5.30 (.208) 5.10 (.201) 12.30 (.484) 11.70 (.461) F EE D DIR ECT IO N 8.10 ( .318) 7.90 ( .311) 6.50 ( .255) 6.30 ( .248) 2.60 (.102) 1.50 (.059) 2.20 (.086) 2.00 (.079) 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 2 330.00 ( 13.000) MAX . 50.0 0 (1.969) MIN. NO TE S: 1 C ON FO RM S T O E IA- 481- 1 2 INCLUDES F LANG E DIST O RT IO N @ OU TE R E DGE 3 D IME NS IO NS MEA SURE D @ HUB 4 C ON TRO LLING DIME NSIO N : MET RIC 14.40 ( .566) 12.40 ( .448) 3 18.40 (.724) M AX 3 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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